p PJC7407 march 10,2014-rev.00 page 1 20v p-channel enhancement mode mosfet voltage -20 v current -1.3a sot-323 unit: inch(mm) features ? r ds(on) , v gs @-4.5v, i d @-1.3a<125m ? ? r ds(on) , v gs @-2.5v, i d @-1.0a<150m ? ? r ds(on) , v gs @-1.8v, i d @-0.5a<200m ? ? advanced trench process technology ? specially designed for switch lo ad, pwm application, etc. ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case : sot-323 package ? terminals : solderable per mil-std-750, method 2026 ? approx. weight : 0.0002 ounces, 0.005 grams ? marking : c07 parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 12 v continuous drain current i d -1.3 a pulsed drain current (note 4) i dm -5.2 a power dissipation t a =25 o c p d 350 mw derate above 25 o c 2.8 mw/ o c operating junction and storage temperature range t j ,t stg -55~150 o c typical thermal resistance - junction to ambient (note 3) r ja 357 o c/w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p PJC7407 march 10,2014-rev.00 page 2 electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -20 - - v gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -0.4 -0.69 -1.2 v drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-1.3a - 101 125 m ? v gs =-2.5v, i d =-1.0a - 120 150 v gs =-1.8v, i d =-0.5a - 139 200 zero gate voltage drain current i dss v ds =-20v, v gs =0v - -0.01 -1 ua gate-source leakage current i gss v gs =+ 12v, v ds =0v - + 10 + 100 na dynamic total gate charge q g v ds =-10v, i d =-1.3a, v gs =-4.5v (note 1,2) - 5.4 - nc gate-source charge q gs - 0.7 - gate-drain charge q gd - 1.4 - input capacitance ciss v ds =-10v, v gs =0v, f=1.0mhz - 416 - pf output capacitance coss - 43 - reverse transfer capacitance crss - 32 - switching turn-on delay time td (on) v dd =-10v, i d =-1.3a, v gs =-4.5v, r g =6 ? (note 1,2) - 3.9 - ns turn-on rise time tr 27 - turn-off delay time td (off) 78 - turn-off fall time tf - 45 - drain-source diode maximum continuous drain-source diode forward current i s --- - - -0.5 a diode forward voltage v sd i s =-1a, v gs =0v -0.8 -1.2 v notes : 1. pulse width< 300us, duty cycle< 2% 2. essentially independent of operating temperature typical characteristics. 3. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 in ch fr-4 with 2oz. square pad of copper. 4. the maximum current rating is package limited.
p PJC7407 march 10,2014-rev.00 page 3 typical characteristic curves fig.1 on-region characteristics fig.2 transfer characteristics fig.3 on-resistance vs. drain current fig.4 on-resistance vs. junction temperature fig.5 on-resistance variation with vgs. fig.6 body dlode characterlslcs
p PJC7407 march 10,2014-rev.00 page 4 typical characteristic curves fig.7 gate-charge characteristics fig.8 threshold voltage variation with temperature. fig.9 threshold voltage variation with temperature.
p PJC7407 march 10,2014-rev.00 page 5 part no packing code version order information part no packing code package type packing type marking version PJC7407_r1_00001 sot-323 3k pcs / 7? reel c07 halogen free PJC7407_r2_00001 sot-323 12k pcs / 13? reel c07 halogen free
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